Details
Features
◆VDS(V)=100V,ID=15A
◆RDS(ON)
TYP:80mΩ@VGS=10V,ID=7.5A
TYP:80mΩ@VGS=10V,ID=7.5A
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- FIELD EFFECT TRANSISTOR
- SCHOTTKY DIODES
- ULTRAFAST RECOVERY POWER RECTIFIER
- SIC SCHOTTKY DIODES
- Silicon carbide MOSFET
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Address：8 / F, Building B, Shenye U Center, Hangcheng Street, Baoan District, Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：Kiki@hisemicon.com
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