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◆VDS=40V,ID=8A
◆RDS(on)
TYP:20.2mΩ@VGS=10V
TYP:23.5mΩ@VGS=4.5V
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- FIELD EFFECT TRANSISTOR
- SCHOTTKY DIODES
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- Silicon carbide MOSFET
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Address：8 / F, Building B, Shenye U Center, Hangcheng Street, Baoan District, Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：sunny@hisemicon.com
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