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FEATURES
◆RDS(on)=2.6mΩ(Typ)@VGS=10V
◆RDS(on)=4.1mΩ(Typ)@VGS=4.5V
◆VDS=30V,ID=150A
◆LowCrss:320pF(Typ)@VDS=25V
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- FIELD EFFECT TRANSISTOR
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Address：8 / F, Building B, Shenye U Center, Hangcheng Street, Baoan District, Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：Kiki@hisemicon.com
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