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◆VDS=30V，ID=120A
◆RDS(on)
TYP:3.4mΩ@VGS=10V，ID=40A
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- FIELD EFFECT TRANSISTOR
- SCHOTTKY DIODES
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- SIC SCHOTTKY DIODES
- Silicon carbide MOSFET
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Address：Room 402-404,Qianhai ChengJin Building,Moon Bay Boulevard, Nanshan District,Shenzhen
Tel：0755-88327180
Fax：0755-88327190
Email：sunny@hisemicon.com
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